• Revealing the Quasi-Periodic Crystallographic Structure of Self-Assembled SnTiS3 Misfit Compound 

      Rajput, Nitul S.; Baik, Hionsuck; Lu, Jin-You; Tamalampudi, Srinivasa Reddy; Sankar, Raman; Al Ghaferi, Amal; Chiesa, Matteo (Journal article; Tidsskriftartikkel; Peer reviewed, 2021-04-28)
      Chemical vapor transport synthesis of SnTiS3 yields a self-assembled heterostructure of two distinct constituent materials, the semiconductor SnS and the semimetal TiS2. The misfit layer compound, although thermodynamically stable, is structurally complex, and precise understanding of the structure is necessary for designing nanoengineered heterojunction compound devices or for theoretical studies. ...
    • Superposition of semiconductor and semi-metal properties of self-assembled 2D SnTiS3 heterostructures 

      Tamalampudi, Srinivasa Reddy; Lu, Jin-You; Rajput, Nitul; Alfakes, Boulos; Sankar, Raman; Apostoleris, Harry; Patole, Shashikant; Almansouri, Ibraheem; Chiesa, Matteo (Journal article; Tidsskriftartikkel; Peer reviewed, 2020-07-15)
      Two-dimensional metal dichalcogenide/monochalcogenide thin flakes have attracted much attention owing to their remarkable electronic and electrochemical properties; however, chemical instability limits their applications. Chemical vapor transport (CVT)- synthesized SnTiS<sub>3</sub> thin flakes exhibit misfit heterojunction structure and are highly stable in ambient conditions, offering a ...
    • Thickness-Dependent Resonant Raman and E' Photoluminescence Spectra of Indium Selenide and Indium Selenide/Graphene Heterostructures 

      Tamalampudi, Srinivasa Reddy; Sankar, Raman; Apostoleris, Harry; Almahri, Mariam Ali; Alfakes, Boulos; Al-Hagri, Abdulrahman; Li, Ru; Gougam, Adel; Almansouri, Ibraheem; Chiesa, Matteo; Lu, Jin-You (Journal article; Tidsskriftartikkel; Peer reviewed, 2019-05-28)
      Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention because of the dependence of its bandgap on sample thickness, making it suitable for small-scale optoelectronic device applications. In this work, by the use of Raman spectroscopy with three different laser wavelengths, including 488, 532, and 633 nm, representing resonant, near-resonant, and conventional ...